Electronic transport properties of a-Si:H

To investigate the electron transport properties of hydrogenated amorphous silicon (a-Si:H), a series quantum simulations and analyses were performed. The target system is nano-scale junction a-Si:H with various hydrogen concentrations sandwiched between two metal electrodes. density functional based tight binding simulation was conducted to obtain electronic structure, non-equilibrium Green’s function method adopted evaluate transmission coefficient electric current under bias field. It confirmed that atoms passivate part defects in silicon, but remaining realize energy states bandgap; p orbitals mainly contribute transmission. behavior greatly affected by concentration. interface electrodes also influences through changing spatial charge inside a-Si:H.